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AssigneeOki Data Corporation
InventorsMitsuhiko Ogihara, Tomohiko Sagimori, Masaaki Sakuta, Akihiro Hashimoto
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In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer.
A separation method of a nitride semiconductor layer, said separation method comprising the steps of:
A manufacturing method of a semiconductor device, said manufacturing method comprising the steps of:
A manufacturing method of a semiconductor wafer, said manufacturing method comprising the steps of:
A semiconductor wafer comprising:
Dependencies are inferred from the claim text.
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With a substrate not being Group III-V materials: the light-emitting regions comprising nitride materials
Characterised by the materials: being Group IV materials, e.g. B-doped Si or undoped Ge
Being Group III-V materials, e.g. GaAs: nitride Group III-V materials, e.g. AlN or GaN
Being a two-dimensional material: graphene
About 4 years 3 months of term left · ends 22 Jan 2031 (estimated)
The present invention relates to a separation method of nitride semiconductor layer, a semiconductor device and a manufacturing method thereof.
The present invention also relates to a semiconductor wafer, and a manufacturing method thereof.
As an example of a conventional manufacturing method of a semiconductor device, Patent Document No. 1 discloses a manufacturing method of an LED (Light Emitting Diode), in which a buffer layer, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer, an n-type contact layer are grown on a sapphire substrate in this order so as to form a semiconductor wafer. Further, these layers are etched so as to partially remove the n-type contract layer, the p-type nitride semiconductor layer and the active layer, and to expose the n-type nitride semiconductor layer. Then, an Al (aluminum) electrode is formed on the exposed surface of the n-type nitride semiconductor layer and on the surface of the n-type contact layer using a deposition method. Thereafter, a heat treatment is performed to ensure a sufficient contact.
In the attached drawings:
FIG. 1A is a sectional view showing a graphene-layer-grown substrate according to a first embodiment of the present invention;
FIG. 1B is a schematic perspective view showing a structure of the epitaxial graphene layer;
Hereinafter, embodiments of the present invention will be described with reference to drawings. The present invention is not limited to the embodiment described below, and modifications and improvements may be made to the invention without departing from the spirit and scope of the invention.
FIGS. 1A through 13B are views for illustrating a separation method of a semiconductor layer (i.e., a semiconductor thin film) and a manufacturing method of a nitride semiconductor device according to the first embodiment of the present invention.
FIG. 1A shows a graphene-layer-grown substrate 200 (i.e., a substrate with an epitaxial graphene layer) according to the first embodiment of the present invention. The graphene-layer-grown substrate 200 includes a SiC substrate 101 as a first substrate (i.e., a semiconductor substrate) and an epitaxial graphene layer 110 formed on the substrate 101. The epitaxial graphene layer 110 is in the form of a single layer, or two or more layers. In this example, the epitaxial graphene layer 110 includes three graphene layers 111a, 111b and 111c.