Cleaning method for a process of liquid immersion lithography
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsJun Koshiyama, Jiro Yokoya, Tomoyuki Hirano, Hiromitsu Tsuji
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AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsJun Koshiyama, Jiro Yokoya, Tomoyuki Hirano, Hiromitsu Tsuji
Estimating the term…
Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production. Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.
A cleaning method in a process of liquid immersion lithography that comprises using a photoexposure device provided with at least an optical lens member, a wafer stage, a liquid-introducing flow line and a liquid-discharging flow line, introducing a medium for liquid immersion lithography into a space between the optical lens member and an object for photoexposure mounted on the wafer stage, through the liquid-introducing flow line, then thus filling the space with the medium for liquid immersion lithography and simultaneously discharging the medium for liquid immersion lithography through the liquid-discharging flow line to attain photoexposure;
A cleaning method in a process of liquid immersion lithography that comprises filling a space between an optical lens member of a photoexposure device and an object for photoexposure mounted on a wafer stage, with a medium for liquid immersion lithography to attain photoexposure;
Dependencies are inferred from the claim text.