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AssigneeApplied Materials, Inc.
InventorsYoshitaka Yokota, Sundar Ramamurthy, Vedapuram Achutharaman, Cory Czarnik, Mehran Behdjat, Christopher Olsen
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A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.
A fluid cooled gas injector configured to inject gas from a distal end of the injector along an injector axis through a sidewall of a processing chamber, comprising:
A fluid-cooled injector configured to inject processing gas along an injector axis into a processing chamber and projecting into the processing chamber along the injector axis, comprising:
Dependencies are inferred from the claim text.