Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus

#This application claims priority to and the benefit of Japanese Patent Application Nos. 2010-044088 filed on Mar. 1, 2010, 2010-059656 filed on Mar. 16, 2010, 2010-280484 filed on Dec. 16, 2010 and 2010-285773 filed on Dec. 22, 2010, the disclosure of which is incorporated herein by reference.

#The present invention relates to a method of manufacturing a semiconductor device including a step of processing a substrate, a method of manufacturing a substrate and a substrate processing apparatus, and more particularly, to a method of manufacturing a semiconductor device including a step of forming a silicon carbide (hereinafter, referred to as SiC) film on a substrate, a method of manufacturing a substrate and a substrate processing apparatus.

#SiC is attracting attention as, in particular, a device material for a power device. Meanwhile, SiC is known as a material with which it is difficult to manufacture a crystalline substrate or device in comparison with silicon (Si).

#FIG. 1 is a perspective view of a semiconductor manufacturing apparatus 10 according to a first embodiment of the present invention;

#FIG. 2 is a side cross-sectional view of the semiconductor manufacturing apparatus 10 according to the first embodiment of the present invention;

#FIG. 3 is a top cross-sectional view of the semiconductor manufacturing apparatus 10 according to the first embodiment of the present invention;

#Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a perspective view showing an example of a semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film according to the first embodiment of the present invention. The semiconductor manufacturing apparatus 10 serving as a substrate processing apparatus, is a batch-type vertical heat treatment apparatus, and includes a housing in which major components are disposed. In the semiconductor manufacturing apparatus 10, a front opening unified pod (FOUP; hereinafter, referred to as a pod) 16 is used as a substrate accommodating unit. The substrate accommodating unit accommodates a wafer 14 such as a substrate made of, for example, Si, SiC, etc. The pod 16 is used as a wafer carrier. A pod stage 18 is disposed in the front of the housing 12, and the pod 16 is conveyed to the pod stage 18. The pod 16 accommodates, for example, twenty five sheets of wafers 14. The pod 16 is placed on the pod stage 18 with a lid of the pod 16 closed.

#A pod conveyance apparatus 20 is disposed in the front of the housing 12 and vertically opposite to the pod stage 18. In addition, a pod storage apparatus 22, a pod opener 24 and a substrate number detector 26 are disposed near the pod conveyance apparatus 20. The pod storage apparatus 22 is disposed over the pod opener 24, and configured to hold a plurality of pods 16 placed thereon. The substrate number detector 26 is disposed near the pod opener 24. The pod conveyance apparatus 20 conveys the pod 16 among the pod stage 18, the pod storage apparatus 22 and the pod opener 24. The pod opener 24 opens the lid of the pod 16. The substrate number detector 26 detects the number of wafers 14 in the pod 16 whose lid is open.

#A substrate transfer apparatus 28 and a boat 30, which is a substrate holder, are disposed in the housing 12. The substrate transfer apparatus 28 includes an arm 32 (tweezers) and is configured to be able to vertically move and horizontally rotate by a driving means (not shown). The arm 32 can take out, for example, five sheets of wafers. As the arm 32 moves, the wafers 14 are transferred between the pod 16, placed on a position of the pod opener 24, and the boat 30.