Multi-zone temperature control for semiconductor wafer

A method comprising:

• performing an ion implantation process on a semiconductor wafer supported by a platen or electrostatic chuck;
• and
• supplying first and second different coolant fluids to respective first and second fluid conduits in or adjacent to the platen or electrostatic chuck in respective first and second zones of the platen or electrostatic chuck, to independently control the temperature of the wafer in respective first and second portions of the wafer adjacent to the first and second zones of the platen or electrostatic chuck during the ion implantation process,
• wherein the step of supplying first and second different coolant fluids includes:
• supplying the coolant fluid in each zone at a respective substantially constant supply temperature;
• and
• varying a volumetric flow rate of coolant fluid supplied in each zone.

A method comprising:

• performing an ion implantation process on a semiconductor wafer supported by a platen or electrostatic chuck;
• and
• chilling first and second coolants in respectively different chilling or refrigeration units;
• supplying the first and second different coolant fluids to respective first and second fluid conduits in or adjacent to the platen or electrostatic chuck in respective first and second concentric annular zones of the platen or electrostatic chuck, wherein the supplying step includes supplying respectively different coolants from the group consisting of liquid hydrogen, liquid helium, liquid nitrogen, liquid oxygen, liquid methane, and liquid nitrous oxide from respectively different chilling or refrigeration units, so as to maintain a substantially uniform wafer temperature across the wafer;
• and
• independently controlling the temperature of the wafer in respective first and second portions of the wafer adjacent to the first and second zones of the platen or electrostatic chuck during the ion implantation process so that an amorphous region is formed in the wafer, including
• collecting temperature feedback data using a plurality of sensors on or in the platen or electrostatic chuck;
• and
• using the temperature feedback data to control the temperature in each zone;
• and
• annealing the wafer after the ion implantation.

A method comprising:

• performing an ion implantation process on a semiconductor wafer supported by a platen or electrostatic chuck;
• and
• chilling first and second coolants in respectively different chilling or refrigeration units;
• supplying the first and second different coolant fluids to respective first and second fluid conduits in or adjacent to the platen or electrostatic chuck in respective first and second concentric annular zones of the platen or electrostatic chuck, wherein the supplying step includes supplying respectively different coolants from the group consisting of liquid hydrogen, liquid helium, liquid nitrogen, liquid oxygen, liquid methane, and liquid nitrous oxide from respectively different chilling or refrigeration units, so as to maintain a substantially uniform wafer temperature across the wafer;
• and
• independently controlling the temperature of the wafer in respective first and second portions of the wafer adjacent to the first and second zones of the platen or electrostatic chuck during the ion implantation process so that an amorphous region is formed in the wafer, including
• collecting temperature feedback data using a plurality of sensors on or in the platen or electrostatic chuck;
• and
• using the temperature feedback data to control the temperature in each zone;
• supplying the coolant fluid in each zone at a respective substantially constant supply temperature;
• using a table in a controller to determine the volumetric flow rate of coolant fluid supplied each zone, and
• varying a volumetric flow rate of coolant fluid supplied in each zone;
• annealing the wafer after the ion implantation.