Multibeam coherent laser diode source (embodiments)

A diode source of multibeam coherent laser emission containing

• at least one master laser, the master laser being a single-mode single-frequency master diode laser,
• at least one linear amplifier, the linear amplifier being a diode optical amplifier integrally and optically connected with said master laser,
• at least two perpendicular amplifiers, the perpendicular amplifiers being diode optical amplifiers integrally and optically connected with the linear amplifier;
• said master laser, said linear amplifier and said perpendicular amplifiers being formed in a common heterostructure based on semiconductor compounds, said heterostructure containing
• at least one active layer,
• at least two cladding layers, and
• an emission leak-in region transparent for emission, said leak-in region being placed between the active layer and a corresponding cladding layer at least on one side of the active layer and containing at least a leak-in layer, wherein said heterostructure is characterized by the ratio of the effective refractive index neff of the heterostructure to the refractive index nIN of the leak-in layer, namely, the ratio of neff to nIN being in the range from one to one minus gamma, where gamma is determined by a number much less than one;
• said master laser including
• an active stripe lasing region with connected metallization layers,
• a lateral emission confinement region with a connected insulating layer, said confinement region being located on each lateral side of the active stripe lasing region of the master laser,
• ohmic contacts,
• optical facets,
• reflectors, and
• an optical resonator, and wherein on both optical facets the reflectors of the optical resonator have reflection coefficients near one and are placed in the specified vicinity of location of the active layer of the heterostructure;
• the linear amplifier including at least an active amplification region with connected metallization layers located such that an optical axis of propagation of emission of the master laser coincides with an optical axis of the linear amplifier;
• the perpendicular amplifier including at least an active amplification region with connected metallization layers and an optical output facet with an optical antireflection coating being located such that the optical axis of the perpendicular amplifier is located at a right angle (modulus) to the optical axis of the linear amplifier;
• and wherein in a vicinity of an intersection of the optical axis of the linear amplifier with the optical axis of each perpendicular amplifier there is a rotary element for flow of a specified portion of laser emission from the linear amplifier to the perpendicular amplifier, said rotary element including at least one optical reflecting plane perpendicular to the plane of the layers of the heterostructure, crossing the active layer and part of the leak-in region within a thickness of the leak-in layer from 20% to 80%, and making angles of inclination with the optical axes of the linear amplifier and of the perpendicular amplifier of about 45° (modulus).