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US 8,393,091 B2Granted
Substrate processing method, and method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorTomokazu Kawamoto
Life of this patent
Estimating the term…
Abstract
There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of the pipes, and heating the gas. In the substrate processing apparatus, the heaters heat the gas to a temperature lower than a temperature at which exhaust gas is generated from the pipes to dry the substrate in the heated gas.
Claims3
A substrate processing method comprising:
- supplying a gas set to have a concentration in which a dew point of organic solvent becomes lower than 20° C. in a pipe made of resin,
- allowing the gas to pass through the pipe while heating the gas at a temperature equal to or above 20° C. and lower than 100° C. at which degas is generated from the pipe, and
- then, supplying the heated gas from the pipe, and exposing a substrate to the heated gas to dry the substrate.
Dependencies are inferred from the claim text.