Metallic-glass-based phase-change memory
AssigneeThe Royal Institution for the Advancement of Learning/Mcgill University
InventorZaven Altounian
Life of this patent
Estimating the term…
Abstract
A phase-change material for use in a phase-change memory device is provided. The phase-change material includes at least one metal and is reversibly phase-changeable, switchable, to a detectable metallic glass state or to a detectable crystalline state thereof. There is also provided a phase-change memory, that includes at least one phase change memory cell comprising the phase change material whereby the phase-change material and thereby the phase-change memory cell is reversibly programmable to one of these states. A method of fabricating the phase-change memory is also provided.
Claims26
A phase-change material for use in a phase-change memory device, said phase-change material being essentially a non-chalogenide-based phase-change material and comprising at least one metal and being reversibly phase-changeable to a detectable metallic glass state and at least one detectable crystalline state thereof.
A phase-change memory, said phase-change memory comprising at least one phase-change memory cell comprising a phase-change material, said phase change material being essentially a non-chalogenide-based phase-change material and comprising at least one metal and being reversibly phase-changeable to a detectable metallic glass state and at least one detectable crystalline state thereof, and whereby said phase-change material and thereby said phase-change memory cell is reversibly programmable to said detectable metallic glass state and said at least one detectable crystalline state.
A method of fabricating a phase-change memory comprising:
- fabricating at least one phase-change memory cell comprising a phase-change material, said phase change material being essentially a non-chalogenide-based phase-change material and comprising at least one metal and being reversibly phase-changeable to a detectable metallic glass state and at least one detectable crystalline state thereof, and whereby said phase-change material and thereby said at least one phase-change memory cell is reversibly programmable to said detectable metallic glass state and said at least one detectable crystalline state.
Dependencies are inferred from the claim text.