US 8,377,208 B2 · System and method for manufacturing polycrystal silicon

Abstract

A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.

Claims17

Dependent claims

A polycrystal silicon manufacturing apparatus comprising:

a reaction pipe comprising silicon particles provided therein;
a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe;
and
a first pressure sensor configured to measure a pressure of a first area in the reaction pipe;
a second pressure sensor configured to measure a pressure of a second area in the reaction pipe;
and
a control unit configured to operate a particle outlet to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.

4 more elements

Dependencies are inferred from the claim text.

System and method for manufacturing polycrystal silicon

Life of this patent

System and method for manufacturing polycrystal silicon

Life of this patent

Abstract

Claims17