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US 8,368,469 B2Granted
Silicon-on-insulator high power amplifiers
AssigneePurdue Research Foundation
InventorsSaeed Mohammadi, Sultan R. Helmi, Jing-Hwa Chen, Andrew J. Robison
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Abstract
Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.
Claims16
A power amplifier comprising:
- a plurality of amplifier cells each having an input and an output, the plurality of amplifier cells being formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series, wherein each of the plurality of amplifier cells comprises:
- a first transistor that is electrically insulated from the semiconductor substrate;
- a first feedback resistor configured to dynamically bias the first transistor;
- and
- a second transistor that is electrically insulated from the semiconductor substrate, the first and second transistors of each of the plurality of amplifier cells being configured as a cascode amplifier;
- and
- wherein the first transistor of each of the plurality of amplifier cells is arranged in a common-source configuration and the second transistor of each of the plurality of amplifier cells is arranged in a common-gate configuration.
4 more elements
Dependencies are inferred from the claim text.