Light emitting system and method of fabricating and using the same
AssigneeTechnion Research & Development Foundation Limited
InventorsGad Bahir, Dan Fekete, Asaf Albo
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Abstract
A light emitting system is disclosed. The system comprises an active region having a stack of bilayer quantum well structures separated from each other by barrier layers. Each bilayer quantum well structure is formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of the bilayer quantum well structure is at least 200 meV.
Claims33
A method of producing light, comprising applying bias to a light emitting system having an active region which comprises a stack of bilayer quantum well structures separated from each other by barrier layers, each bilayer quantum well structure being formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of said bilayer quantum well structure is at least 200 meV.
A method, comprising:
- growing on a substrate a first layer made of a first semiconductor alloy for electron confinement;
- and
- growing on said first layer a second layer made of a second semiconductor alloy for hole confinement, thereby forming a bilayer quantum well structure on said substrate;
- wherein an overall thickness of said bilayer quantum well structure is selected so as to configure a predetermined energy band, and an individual thickness of each layer is selected so as to independently configure a predetermined band offset.
A light emitting system, comprising an active region having a stack of bilayer quantum well structures separated from each other by barrier layers, each bilayer quantum well structure being formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of said bilayer quantum well structure is at least 200 meV.
Dependencies are inferred from the claim text.