Embedded wafer-level bonding approaches

A method comprising:

• providing a carrier with an adhesive layer disposed thereon;
• providing a plurality of dies, with each of the plurality of dies comprising:
• a substrate;
• a plurality of bond pads over the substrate;
• a dielectric layer over the plurality of bond pads;
• and
• a plurality of metal pillars in the dielectric layer and electrically coupled to the plurality of bond pads, wherein in each of the plurality of dies, the dielectric layer comprises a top portion over top surfaces of the plurality of metal pillars;
• placing the plurality of dies on the adhesive layer with a bottom of the substrate of each of the plurality of dies facing the adhesive layer;
• filling a molding compound between the plurality of dies, wherein the molding compound covers the dielectric layer of each of the plurality of dies, wherein substantially entireties of all gaps between the plurality of dies are filled with the molding compound;
• performing a planarization on the molding compound until the plurality of metal pillars are exposed, wherein in the step of planarization, the top portion of the dielectric layer is removed, and the plurality of metal pillars are exposed;
• and
• forming redistribution lines over and electrically coupled to the plurality of metal pillars.