Back to results
US 8,354,340 B2Granted
Electronic device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsYoichiro Kurita, Masaya Kawano, Koji Soejima
Life of this patent
Estimating the term…
Abstract
In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.
Claims21
A method of manufacturing an electronic device, comprising:
- forming a first interconnect layer including an interconnect on a supporting substrate, the first interconnect layer being formed from a first resin having a first decomposition temperature, said forming said first interconnect layer including forming a first conductive via plug having sidewalls tapering along a first direction;
- removing said supporting substrate from said first interconnect layer, said removing said supporting substrate from said first interconnect layer including exposing an undersurface of the first interconnect layer by removing said supporting substrate and thereby exposing an undersurface of said first conductive via plug;
- and
- forming a second interconnect layer by a build-up process on the undersurface of said first interconnect layer after said supporting substrate is removed, said forming the second interconnect layer including
- forming a resin layer comprising a second resin having a second decomposition temperature lower than said first decomposition temperature with said resin layer contacting with the exposed undersurface of said first interconnect layer and extending to further outside than said first interconnect layer in plan view,
- forming a second conductive via plug in said resin layer so as to be connected to said first conductive via plug, said second conductive via plug having sidewalls tapering along a second direction different from said first direction, the second conductive via plug formed so as to extend into said first interconnect layer and to be connected to said first conductive via plug at a conductive interface buried within the first interconnect layer, and
- forming a build-up interconnect layer on an underside of said resin layer to form said second interconnect layer, wherein said second interconnect layer laterally extends beyond sides of said first interconnect layer.
4 more elements
An electronic device, comprising:
- a first interconnect layer formed of a first resin;
- and
- a second interconnect layer comprised of i) a resin layer formed of a second resin, said resin layer contacting an undersurface side of the first interconnect layer and laterally extends beyond sides of said first interconnect layer in plan view, and ii) a build-up interconnect layer on an underside of said resin layer, said build-up interconnect layer laterally extending beyond sides of said first interconnect layer,
- wherein said first resin has a decomposition temperature higher than that of said second resin and at least one electrical contact of said second interconnect layer is formed having sidewalls tapering along a first direction so as to extend into said first interconnect layer and making physical contact with at least one electrical contact within said first interconnect layer, which has sidewalls tapering along a second direction different from said first direction, at a conductive interface buried within the first interconnect layer.
1 more element
A method of manufacturing an electronic device, comprising:
- forming a first interconnect layer including an interconnect on a supporting substrate and a first conductive via plug having sidewalls tapering along a first direction, the first interconnect layer being formed from a first resin having a first decomposition temperature;
- removing said supporting substrate from said first interconnect layer;
- forming a second interconnect layer by a build-up process on a surface of said first interconnect layer wherein said supporting substrate is removed and exposes an undersurface of said first interconnect layer and an undersurface of said first conductive via plug, said second interconnect layer includes alternating layers of conductor interconnects and insulation layers additively built individually upon the surface of said first interconnect layer, and laterally extending beyond sides of said first interconnect layer, and said forming of second interconnect layer including
- forming a resin layer comprising a second resin having a second decomposition temperature lower than said first decomposition temperature, with said resin layer contacting with the exposed undersurface of said first interconnect layer and extending to further outside than said first interconnect layer in plan view,
- forming a second conductive via plug in said resin layer so as to be connected to said first conductive via plug, said second conductive via plug having sidewalls tapering along a second direction different from said first direction, the second conductive via plug formed so as to extend into said first interconnect layer and to be connected to said first conductive via plug at a conductive interface buried within the first interconnect layer, and
- forming a build-up interconnect layer on an underside of said resin layer to form said second interconnect layer, wherein said second interconnect layer laterally extends beyond sides of said first interconnect layer;
- and
- forming a third resin on an entirety of said laterally extending portion of a surface in the opposite side to a surface removed a supporting substrate in said second interconnect layer.
5 more elements
Dependencies are inferred from the claim text.