Polycrystalline diamond compact including a substrate having a raised interfacial surface bonded to a leached polycrystalline diamond table, and applications therefor

A rotary drill bit, comprising:

• a bit body configured to engage a subterranean formation;
• and
• a plurality of polycrystalline diamond cutting elements affixed to the bit body, at least one of the polycrystalline diamond cutting elements including,
• a substrate including an interfacial surface having a domed generally hemispherical raised region;
• and
• a polycrystalline diamond table bonded to the interfacial surface of the substrate, the polycrystalline diamond table defining an upper surface and exhibiting a thickness over the domed generally hemispherical raised region of about 1900 μm or less, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including,
• a first region adjacent to the substrate that includes metal-solvent catalyst disposed interstitially between the bonded diamond grains thereof;
• and
• a leached second region extending inwardly from the upper surface, the interstitial regions of the leached second region depleted of metal-solvent catalyst, the leached second region exhibiting a maximum leach depth, a ratio of the thickness of the polycrystalline diamond table to the maximum leach depth being about 1.25 to about 8.0.

A method of fabricating a leached polycrystalline diamond compact, comprising:

• providing a polycrystalline diamond compact including,
• a substrate including an interfacial surface having a domed generally elliptical raised region having a generally elliptical cross-sectional geometry;
• and
• a polycrystalline diamond table bonded to the interfacial surface of the substrate, the polycrystalline diamond table defining an upper surface and exhibiting a thickness over the domed generally elliptical raised region of about 1900 μm or less, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including,
• a first region adjacent to the substrate that includes metal-solvent catalyst disposed interstitially between the bonded diamond grains thereof;
• and
• a second region extending inwardly from the upper surface that includes metal-solvent catalyst disposed interstitially between the bonded diamond grains thereof;
• and
• leaching at least a portion of the metal-solvent catalyst from the second region of the polycrystalline diamond table so that the second region exhibits a maximum leach depth, wherein a ratio of the thickness of the polycrystalline diamond table to the maximum leach depth being about 1.25 to about 8.0.

A polycrystalline diamond compact, comprising:

• a substrate including an interfacial surface having a domed generally elliptical raised region having a generally elliptical cross-sectional geometry and a peripheral region;
• and
• a polycrystalline diamond table bonded to the interfacial surface of the substrate, the polycrystalline diamond table defining an upper surface, the polycrystalline diamond table exhibiting a first thickness over the domed generally elliptical raised region and a second thickness over the peripheral region of about 1125 μm to about 5700 μm that is greater than the first thickness, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including,
• a first region adjacent to the substrate that includes metal-solvent catalyst disposed interstitially between the bonded diamond grains thereof;
• and
• a leached second region extending inwardly from the upper surface, the interstitial regions of the leached second region depleted of metal-solvent catalyst, the leached second region exhibiting a maximum leach depth, a ratio of the first thickness of the polycrystalline diamond table to the maximum leach depth being about 1.25 to about 8.0.