Rectification element and method for resistive switching for non volatile memory device
AssigneeThe Regents of the University of Michigan
InventorsWei Lu, Sung Hyun Jo
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Abstract
A method of suppressing propagation of leakage current in an array of switching devices. The method includes providing a dielectric breakdown element integrally and serially connected to a switching element within each of the switching device. A read voltage (for example) is applied to a selected cell. The propagation of leakage current is suppressed by each of the dielectric breakdown element in unselected cells in the array. The read voltage is sufficient to cause breakdown in the selected cells but insufficient to cause breakdown in the serially connected, unselected cells in a specific embodiment. Methods to fabricate of such devices and to program, to erase and to read the device are provided.
Claims25
A semiconductor memory device comprising:
- a semiconductor substrate;
- a first electrode structure spatially disposed in a first direction and provided on a portion of the semiconductor substrate;
- a second electrode structure spatially disposed in a second direction angled relative to the first direction;
- a resistive switching element located between the first electrode structure and the second electrode structure, the resistive switching element being configured to change in resistance when a voltage is applied between the first electrode structure and the second electrode structure, the voltage being greater than a first threshold voltage;
- and a dielectric breakdown element configured to cause rectification, the dielectric breakdown element being serially connected to the resistive switching element and disposed between the resistive switching element and one of the electrode structures, the dielectric breakdown element having a breakdown voltage less than the first threshold voltage.
Dependencies are inferred from the claim text.