Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O
AssigneeKabushiki Kaisha Toshiba
InventorsYoshihiko Fuji, Hideaki Fukuzawa, Hiromi Yuasa
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Abstract
An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.
Claims8
A magnetoresistive element comprising:
- a first magnetic layer whose magnetization direction is substantially pinned toward one direction;
- a second magnetic layer whose magnetization direction is changed in response to an external magnetic field;
- and
- a spacer layer provided between the first magnetic layer and the second magnetic layer,
- wherein at least one of the first magnetic layer and the second magnetic layer comprises a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85),
- wherein M1 is at least one element selected from the group consisting of Co, Fe, and Ni,
- wherein M2 is at least one element selected from the group consisting of Ti, V, and Cr.
Dependencies are inferred from the claim text.