Semiconductor surface protecting method
Assignee3M Innovtive Properties Company
InventorKazuki Noda
Life of this patent
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Abstract
Provided are a semiconductor surface protecting method and surface protecting sheet employing a material having adequate conformability for irregularities on semiconductor wafer circuit sides and sufficient rigidity as a support during grinding, and which does not become fluid with repeated temperature increases. Also provided is a surface protecting sheet for protection of the circuit side in the step of back side grinding of a semiconductor wafer, the surface protecting sheet having a polymeric film material with a surface protecting layer thereon that may become fluid upon heating and which hardens upon exposure to radiation or upon heating.
Claims11
A semiconductor surface protecting method whereby the circuit side of a semiconductor wafer is protected during the step of back side grinding of the wafer, comprising in order:
- providing a fluid surface protecting layer,
- coating the fluid surface protecting layer on the circuit side of the semiconductor wafer,
- placing a polymeric film material over the fluid surface protecting layer,
- hardening said fluid surface protecting layer by exposure to radiation or upon heating, and
- grinding said semiconductor wafer,
- wherein grinding said semiconductor wafer is done after hardening said fluid surface protecting layer, whereby the coating, placing, and hardening steps are carried out in a vacuum.
Dependencies are inferred from the claim text.