Encapsulated MEMS device and method to form the same
AssigneeSilicon Laboratories Inc.
InventorsQing Gan, Emmanuel P. Quevy
Life of this patent
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Abstract
An encapsulated MEMS device and a method to form an encapsulated MEMS device are described. An apparatus includes a first substrate having a silicon-germanium seal ring disposed thereon and a second substrate having a metal seal ring disposed thereon. The metal seal ring is aligned with and bonded to the silicon-germanium seal ring to provide a sealed cavity. A MEMS device is housed in the sealed cavity. A method includes forming a silicon-germanium seal ring on a first substrate and forming a metal seal ring on a second substrate. The metal seal ring is bonded to the silicon-germanium seal ring to provide a sealed cavity that houses a MEMS device.
Claims24
A method, comprising:
- forming a silicon-germanium seal ring on a first substrate on which a MEMS device is disposed inside of a region enclosed by the silicon-germanium seal ring;
- forming a vertical seal ring stack on a second substrate, the vertical seal ring stack including a metal seal ring;
- forming a metal shielding layer on said second substrate including on a sidewall of the vertical seal ring stack;
- bonding said metal seal ring to said silicon-germanium seal ring to provide a sealed cavity that houses the MEMS device, and to electrically couple the MEMS device and the metal shielding layer.
A method comprising:
- forming a silicon-germanium seal ring on a first substrate;
- forming a metal seal ring above a second substrate, wherein said metal seal ring is formed as part of a metal seal ring stack;
- bonding said metal seal ring to said silicon-germanium seal ring to provide a sealed cavity that houses a MEMS device;
- forming a metal shielding layer on said second substrate including on a sidewall of the metal seal ring stack, inside of a region enclosed by said metal seal ring, prior to bonding said metal seal ring to said silicon-germanium seal ring;
- and
- forming an interconnect in the first substrate to electrically couple the MEMS device through the interconnect and the silicon-germanium seal ring to the metal shielding layer.
A method, comprising:
- forming a silicon-germanium seal ring on a first substrate;
- forming a metal seal ring on a second substrate;
- forming inlets in the second substrate to provide an opening to a cavity, the inlets having a V-groove profile with a wider portion closer to the MEMS device, the inlets arranged to provide constructive interference of sound waves;
- and
- bonding said metal seal ring to said silicon-germanium seal ring to provide the cavity that houses a MEMS device disposed on the first substrate.
A method, comprising:
- forming a silicon-germanium seal ring on a first substrate;
- forming a metal seal ring on a second substrate;
- forming inlets in the second substrate to provide an opening to a cavity, the inlets having a V-groove profile with a wider portion closer to the MEMS device, the inlets arranged to provide constructive interference of optical waves;
- and
- bonding said metal seal ring to said silicon-germanium seal ring to provide the cavity that houses a MEMS device disposed on the first substrate.
Dependencies are inferred from the claim text.