Spin-polarized electron source
AssigneeNational University Corporation Nagoya University
InventorsToru Ujihara, Xiuguang Jin, Yoshikazu Takeda, Tsutomu Nakanishi, Naoto Yamamoto, Takashi Saka, Toshihiro Kato
Life of this patent
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Abstract
A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer. The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.
Claims17
A spin-polarized electron generating device comprising:
- a substrate;
- a buffer layer;
- a strained superlattice layer formed on the buffer layer;
- and
- an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer,
- wherein the buffer layer comprises cracks formed in a direction perpendicular to the substrate by tensile strain.
Dependencies are inferred from the claim text.