Monolithic microwave integrated circuit
AssigneeRaytheon Company
InventorsShahed Reza, Edward Swiderski, Roberto W. Alm
Life of this patent
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Abstract
A monolithic microwave integrated circuit structure having a semiconductor substrate structure with a plurality of active devices and a microwave transmission line having an input section, an output section and a interconnecting section electrically interconnecting the active devices on one surface and a metal layer on an opposite surface overlaying the interconnection section and absent from overlaying at least one of the input section and the output section.
Claims12
A monolithic microwave integrated circuit structure comprising:
- a semiconductor chip comprising:
- a plurality of active devices and a microwave transmission line having an input section, an output section and a interconnecting section electrically interconnecting the active devices on one surface of the chip;
- and
- a metal layer on an opposite surface of the chip overlaying the interconnection section and absent from overlaying at least one of the input section and the output section.
A monolithic microwave integrated circuit structure, comprising:
- a semiconductor chip;
- a plurality of active devices formed in a bottom surface portion of the chip;
- a microwave transmission line formed on the bottom surface of the chip having an input section, an output section and a interconnecting section electrically connected between the input section and the output section, such interconnecting section electrically interconnecting the active devices;
- wherein the semiconductor chip has:
- a first peripheral region disposed on the top surface thereof over the input section;
- a inner region disposed on the top surface thereof over the interconnecting section;
- and a second peripheral region disposed on the top surface thereof over the output section;
- a heat sink disposed over the top surface of the chip;
- a metal layer disposed on the top surface of the chip under the heat sink;
- and
- wherein the metal layer has an outer periphery terminating at the outer periphery of the heat sink.
A monolithic microwave integrated circuit structure, comprising:
- a semiconductor chip;
- a plurality of active devices formed in a bottom surface portion of the chip;
- a microwave transmission line formed on the bottom surface of the chip structure having an input section, an output section and a interconnecting section electrically connected between the input section and the output section, such interconnecting section electrically interconnecting the active devices;
- wherein the semiconductor chip has:
- a first peripheral region disposed on the top surface thereof over the input section;
- a inner region disposed on the top surface thereof over the interconnecting section;
- and a second peripheral region disposed on the top surface thereof over the output section;
- and
- a thermally conductive heat sink disposed over a top surface portion of the chip, such heat sink being disposed over the interconnecting section and having an outer periphery thereof terminating at the first peripheral region and the second peripheral region of the top surface of the chip.
Dependencies are inferred from the claim text.