Gate voltage boosting element for charge pump

A method, comprising:

• initiating a first pre-output stage of a charge pump, wherein the first pre-output stage comprises a first switch cell, a second switch cell, and a first pre-output stage capacitor, the first switch cell and the second switch cell respectively include a node A and a node B, and the node A of the first switch cell is connected to the node B of the second switch cell through the first pre-output stage capacitor;
• initiating an output stage of the charge pump connected to at least one of the first pre-output stage or another pre-output stage of the charge pump, wherein the output stage includes an output-stage switch cell connected to an output-stage capacitor, to facilitate generating an output voltage based at least in part on a voltage generated by the first pre-output stage;
• generating a gate voltage for application to a gate of a first charge transfer switch (CTS) of the first switch cell based at least in part on the respective switching states of a first transistor and a second transistor of the first switch cell;
• and
• applying the gate voltage to the gate of the first CTS to facilitate controlling switching of the first CTS to facilitate generating the voltage by the first pre-output stage.

A system, comprising:

• means for configuring a first pre-output stage of a charge pump, wherein the first pre-output stage comprises a first switch cell, a second switch cell, and a first pre-output stage capacitor, the first switch cell and the second switch cell respectively include a node A and a node B, and the node A of the first switch cell is connected to the node B of the second switch cell through the first pre-output stage capacitor;
• means for configuring an output stage of the charge pump connected to at least one of the first pre-output stage or another pre-output stage of the charge pump, wherein the output stage includes an output-stage switch cell connected to an output-stage capacitor, to facilitate generating an output voltage based at least in part on a voltage generated by the first pre-output stage;
• means for generating agate voltage for application to a gate of a first charge transfer switch (CTS) of the first switch cell based at least in part on the respective switching states of a first means for switching and a second means for switching associated with of the first switch cell;
• and
• means for applying the gate voltage to the gate of the first CTS to facilitate controlling switching of the first CTS to facilitate generating the voltage by the first pre-output stage.