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US 8,334,188 B2Granted
Process for manufacturing a wafer by annealing of buried channels
AssigneeSTMicroelectronics S.r.l.
InventorsFlavio Villa, Gabriele Barlocchi, Pietro Corona
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Abstract
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
Claims17
A method, comprising:
- forming an opening in a region of a semiconductor layer;
- forming an epitaxial layer on the semiconductor layer;
- converting the opening into a cavity encapsulated by semiconductor material during the forming of the epitaxial layer;
- and
- annealing the region.
2 more elements
A method, comprising:
- forming an opening in a region of a semiconductor layer;
- growing an epitaxial layer on the semiconductor layer such that a cavity having a first shape is formed in the semiconductor layer;
- and
- annealing the region to change the first shape of the cavity to a second shape.
1 more element
A method, comprising:
- forming a plurality of openings in a region of a semiconductor layer;
- growing an epitaxial layer on the semiconductor layer such that a plurality of cavities are formed in the semiconductor layer, each cavity aligned with a respective one of the plurality of openings;
- and
- annealing the region.
1 more element
Dependencies are inferred from the claim text.