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US 8,333,913 B2Granted
Sputtering target, oxide semiconductor film and semiconductor device
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi Inoue, Koki Yano, Masashi Kasami
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Abstract
A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.
Claims12
A sputtering target formed of an oxide sintered body,
- the oxide sintered body comprising indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and
- the oxide sintered body substantially being of a bixbyite structure.
An oxide semiconductor film comprising indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and
- the oxide semiconductor film substantially being of a bixbyite structure.
Dependencies are inferred from the claim text.