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US 8,324,660 B2Granted
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAnthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo
Life of this patent
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Abstract
Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
Claims24
A semiconductor structure comprising:
- (a) a substrate having a surface and comprising a first semiconductor material;
- (b) a dislocation-blocking mask disposed over the substrate, the dislocation-blocking mask having a trench extending to the surface of the substrate, the trench being defined by at least one sidewall, the sidewall having a height h at least equal to a predetermined distance H from the surface of the substrate, the trench exposing an exposed region of the substrate, the exposed region of the substrate having a substantially rectangular shape having a width w and a length l;
- and
- (c) a regrowth layer comprising a second semiconductor material formed in the trench,
- wherein a ratio of the height h to the width w is greater than 0.5, and wherein the length l is greater than the height h, and dislocation defects in the regrowth layer terminate at the sidewall of the trench at or below the predetermined distance H.
2 more elements
A structure comprising:
- (a) a substrate having a surface and comprising a first semiconductor material;
- (b) a dislocation-blocking mask disposed over the substrate, the mask having an opening extending to the surface of the substrate, the opening being defined by at least one sidewall, the sidewall having a first height h at least equal to a predetermined distance H from the surface of the substrate, the opening having a width W;
- and
- (c) a regrowth layer comprising a second semiconductor material formed in the opening,
- wherein the sidewall comprises a non-vertical slope, a cross-sectional area of the opening parallel to the surface of the substrate being substantially uniform across a second height of the non-vertical slope, and dislocation defects in the regrowth layer terminate at the sidewall of the opening at or below predetermined distance H.
2 more elements
A semiconductor structure comprising:
- (a) a crystalline substrate having a surface and comprising a first semiconductor material,
- (b) a dislocation-blocking mask disposed over the crystalline substrate, the mask having a trench extending to the surface of the crystalline substrate, the trench being defined by at least one sidewall, the sidewall having a height h at least equal to a predetermined distance H from the surface of the crystalline substrate, the trench being substantially rectangular and having a width w;
- (c) a regrowth layer comprising a second semiconductor material formed in the trench;
- and
- (d) disposed directly below the trench, a recess in the crystalline substrate, wherein a portion of the regrowth layer is disposed in the recess,
- wherein a ratio of the height h to the width w of the trench is greater than 0.5 and dislocation defects in the regrowth layer terminate at the sidewall of the trench at or below predetermined distance H.
3 more elements
A semiconductor structure comprising:
- (a) a substrate having a surface and comprising a first semiconductor material;
- (b) a dislocation-blocking mask disposed over the substrate, the dislocation-blocking mask having a trench extending to the surface of the substrate, the trench being defined by at least one sidewall, the sidewall having a height h at least equal to a predetermined distance H from the surface of the substrate, the trench exposing an exposed region of the substrate, the exposed region of the substrate having a substantially rectangular shape having a width w and a length l;
- and
- (c) a regrowth layer comprising a second semiconductor material formed in the trench,
- wherein the length l is greater than the height h, and dislocation defects in the regrowth layer terminate at the sidewall of the trench at or below the predetermined distance H.
2 more elements
Dependencies are inferred from the claim text.