Semiconductor device, electronic device, and method of manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToshiyuki Isa, Gen Fujii, Masafumi Morisue, Ikuko Kawamata
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Abstract
Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
Claims24
A method for manufacturing a semiconductor device comprising steps of:
- forming a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, wherein the semiconductor layer comprises a first metal oxide;
- and
- forming a source electrode layer electrically connected to the thin film transistor by a droplet discharge method, wherein the source electrode layer comprises a second metal oxide,
- wherein a width of the source electrode layer is continuously varied.
A method for manufacturing a semiconductor device comprising steps of:
- forming a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, wherein the semiconductor layer comprises a first metal oxide;
- and
- forming a drain electrode layer electrically connected to the thin film transistor by a droplet discharge method, wherein the drain electrode layer comprises a second metal oxide,
- wherein a width of the drain electrode layer is continuously varied.
A method for manufacturing a semiconductor device comprising steps of:
- forming a gate electrode over a substrate;
- forming a gate insulating layer over the gate electrode;
- forming a semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween, the semiconductor layer comprising a first metal oxide;
- and
- forming a source electrode layer electrically connected to the semiconductor layer by a droplet discharge method, wherein the source electrode layer comprises a second metal oxide,
- wherein a width of the source electrode layer is continuously varied.
A method for manufacturing a semiconductor device comprising steps of:
- forming a gate electrode over a substrate;
- forming a gate insulating layer over the gate electrode;
- forming a semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween, the semiconductor layer comprising a first metal oxide;
- and
- forming a drain electrode layer electrically connected to the semiconductor layer by a droplet discharge method, wherein the drain electrode layer comprises a second metal oxide,
- wherein a width of the drain electrode layer is continuously varied.
Dependencies are inferred from the claim text.