Method for providing at least one magnetoresistive device

A method for providing at least one magnetoresistive device, the magnetoresistive device being formed from a plurality of magnetoresistive element layers, the method comprising:

• providing a mask, the mask covering a first portion of the plurality of magnetoresistive element layers in at least one device area;
• defining at least one magnetoresistive element from the plurality of magnetoresistive element layers using the mask;
• depositing at least one hard bias layer;
• providing a hard bias capping structure on the at least one hard bias layer, the hard bias capping structure including a first protective layer, a second protective layer, and a planarization stop layer, the first protective layer residing between the planarization stop layer and the at least one hard bias layer, the planarization stop layer residing between the first protective layer and the second protective layer;
• and
• performing a lift-off of the mask after the hard bias capping structure has been provided;
• and
• performing a planarization, the planarization stop layer being configured for the planarization.

A method for providing at least one magnetoresistive device, the magnetoresistive device being formed from a plurality of magnetoresistive element layers, the method comprising:

• providing a photoresist mask, the photoresist mask covering a first portion of the plurality of magnetoresistive element layers in at least one device area;
• defining at least one magnetoresistive element from the plurality of magnetoresistive element layers using the photoresist mask;
• depositing at least one hard bias layer;
• providing a hard bias capping structure including a first protective layer, a planarization stop layer, and a second protective layer, the planarization stop layer residing between the first protective layer and the second protective layer, the first protective layer residing between the planarization stop layer and the at least one hard bias layer, the first protective layer including at least one of Ta, Ru, Cr, and NiCr, the planarization stop layer including at least one of Ru and Rh, the second protective layer including at least one of Ru, Ta, Cr, and NiCr;
• removing a portion of the at least one hard bias layer to open an aperture in the at least one hard bias layer, at least a portion of the hard bias capping structure being exposed in the step of removing the portion of the at least one hard bias layer;
• lifting off the photoresist mask;
• and
• performing a planarization, the planarization stop layer being configured for the planarization.