Non-volatile semiconductor memory segregating sequential data during garbage collection to reduce write amplification

A method of operating a non-volatile semiconductor memory comprising a memory device comprising a memory array including a plurality of blocks, each block comprising a plurality of memory segments, the method comprising:

• defining a plurality of logical block address (LBA) ranges each identifying a plurality of LBA addresses, wherein at least one block is assigned to each LBA range;
• receiving a plurality of write commands from a host, wherein each write command identifies at least one LBA;
• writing data for each write command to the memory device;
• during a garbage collection operation, identifying a memory segment storing valid sequential write data to be relocated and valid random write data to be relocated;
• relocating the valid sequential write data to a memory segment in a block of the corresponding LBA range;
• and
• relocating the valid random write data to a memory segment in a block unassigned to the LBA ranges.