Method and apparatus for cleaning a substrate surface
AssigneeApplied Materials, Inc.
InventorsErrol Antonio C. Sanchez, Johanes Swenberg, David K. Carlson, Roisin L. Doherty
Life of this patent
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Abstract
Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate, and exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface.
Claims20
A method for processing a semiconductor substrate, comprising:
- positioning a substrate in a processing region of a processing chamber;
- exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface;
- removing the substrate from the processing region;
- depositing a gettering layer on a surface of a chamber component disposed in the processing region;
- re-positioning the substrate in the processing region;
- removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate;
- and
- exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface of the substrate.
A method for processing a semiconductor substrate, comprising:
- positioning a substrate in a processing region of a processing chamber;
- exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface;
- removing the substrate from the processing region;
- depositing a gettering layer on a surface of a chamber component disposed in the processing region;
- re-positioning the substrate in the processing region;
- removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate;
- and
- exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface of the substrate, wherein forming the first oxygen containing layer, removing at least the portion of the first oxygen containing layer and forming the second oxygen containing layer are all performed in the processing chamber.
A method for processing a semiconductor substrate, comprising:
- transferring a substrate to a substrate support disposed in a processing region of a processing chamber;
- oxidizing a surface of the substrate by exposing the surface of the substrate to an oxygen containing gas to form a first oxidized layer on the substrate;
- transferring the substrate out of the processing region;
- depositing a gettering layer on a surface of a chamber component disposed in the processing region while shielding a surface of the substrate support;
- transferring the substrate to the substrate support;
- removing at least a portion of the first oxidized layer to expose at least a portion of the surface of the substrate;
- and
- re-oxidizing the exposed surface of the substrate to form a second oxidized layer on the surface of the substrate, wherein forming the first oxidized layer, removing at least the portion of the first oxidized layer and re-oxidizing the exposed surface are all performed in the processing chamber.
Dependencies are inferred from the claim text.