Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming a base insulating film over a substrate in a multi-chamber apparatus having a plurality of film formation chambers;
• forming a semiconductor film comprising amorphous silicon over the base insulating film in the multi-chamber apparatus;
• crystallizing the semiconductor film;
• forming a gate insulating film over the semiconductor film;
• and
• forming a gate electrode over the gate insulating film,
• wherein each of the base insulating film and the semiconductor film is formed by CVD, and
• wherein the base insulating film includes fluorine.

A method of manufacturing a semiconductor device comprising:

• forming an insulating film over a substrate in a first film formation chamber included in a multi-chamber apparatus;
• forming a semiconductor film comprising amorphous silicon over the insulating film in a second film formation chamber included in the multi-chamber apparatus;
• forming a gate insulating film over the semiconductor film;
• and
• forming a gate electrode over the gate insulating film,
• wherein each of the insulating film and the semiconductor film is formed by CVD,
• wherein the insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus, and
• wherein the insulating film includes fluorine.

A method of manufacturing a semiconductor device comprising:

• forming an insulating film over a substrate in a first film formation chamber of a multi-chamber apparatus having the first film formation chamber, a substrate transfer chamber, and a second film formation chamber;
• transferring the substrate from the first film formation chamber to the second film formation chamber through the substrate transfer chamber;
• and
• forming a semiconductor film comprising amorphous silicon over the insulating film in the second film formation chamber,
• wherein each of the insulating film and the semiconductor film is formed by CVD,
• wherein the insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus, and
• wherein the insulating film includes fluorine.