Sensor for quantitative measurement of electromechanical properties and microstructure of nano-materials and method for making the same

A sensor for quantitative measurement of electromechanical properties of a nano-material, comprising:

• a hollow structure composed of, from bottom to top, a barrier layer, a silicon substrate, an epitaxial layer α and an insulation layer, wherein a portion of the barrier layer and a portion of the silicon substrate that are located in a middle part of the hollow structure are removed, while a peripheral part of the hollow structure contains the barrier layer, the silicon substrate, the epitaxial layer α and the insulation layer;
• the middle part includes a first pressure-sensitive resistor cantilever, a second pressure-sensitive resistor cantilever and a suspended structure;
• a groove for receiving a bimetallic strip is formed on an upper surface of the peripheral part;
• an upper surface of the bimetallic strip and upper surfaces of the two pressure-sensitive resistor cantilevers and the suspended structure are at the same level;
• the suspended structure is located between the two pressure-sensitive resistor cantilevers, and is not in contact with the first pressure-sensitive resistor cantilever, a side edge of the suspended structure is parallel to a side edge of the first pressure-sensitive resistor cantilever, there is a protruding part bulging from the side edge of the suspended structure, and the protruding part is not in contact with the bimetallic strip, another side edge of the suspended structure is in contact with the second pressure-sensitive resistor cantilever, the suspended structure connects to the peripheral part by support beams;
• a Wheatstone bridge circuit is provided over each pressure-sensitive resistor cantilever and the peripheral part;
• and
• each Wheatstone bridge circuit, comprising four identical pressure-sensitive resistors, is located between the epitaxial layer α and the insulating layer, two of the four pressure-sensitive resistors located on the peripheral part are used as fixed resistors, another two of the four pressure-sensitive resistors located on top of the pressure-sensitive resistor cantilever are used as variable resistors.