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US 8,300,476 B2Granted
Method for erasing/programming/correcting memory
AssigneeMacronix International Co., Ltd.
InventorMing-Chang Kuo
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Abstract
A memory operating method includes the following steps. First, a memory with a charge storage structure is provided. Next, the memory is biased to a first threshold voltage. Then, the memory is biased to a second threshold voltage. Next, the memory is biased to a third threshold voltage. The first threshold voltage is higher than a first level. The second threshold voltage is lower than a second level. The third threshold voltage is approximating or equal to the second level.
Claims25
A memory operating method, comprising the steps of:
- (a) providing a memory with a charge storage structure;
- (b) providing a first bias so that the memory has a first threshold voltage;
- (c) providing a second bias so that the memory has a second threshold voltage;
- and
- (d) providing a third bias so that the memory has a third threshold voltage;
- wherein the first threshold voltage is higher than a first level, the second threshold voltage is lower than a second level, and the third threshold voltage is approximating or equal to the second level, the first level is an erase level, and the second level is a predetermined bit level.
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