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US 8,300,463 B2Granted
Nonvolatile memory device and related programming method
AssigneeSamsung Electronics Co., Ltd.
InventorsKi Tae Park, Myoung Gon Kang
Life of this patent
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Abstract
A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.
Claims16
A nonvolatile memory device, comprising:
- a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions;
- and
- a control logic component configured to select one of the memory blocks to be programmed based on a program or erase count of each of the respective memory blocks, and further configured to determine a program rule to be applied to the selected memory block based on program or erase counts of the respective regions of the selected memory block.
A method of programming a nonvolatile memory device, comprising:
- selecting a memory block having a low program or erase count from a plurality of memory blocks;
- selecting a program rule to be applied to the selected memory block based on information regarding program or erase counts of respective regions within the selected memory block;
- and
- programming one of the regions of the selected memory block using the selected program rule.
1 more element
Dependencies are inferred from the claim text.