Magnetic random access memory and method of manufacturing the same

A magnetic random access memory comprising:

• a pinned layer whose magnetization orientation is fixed;
• and
• a magnetic recording layer connected to said pinned layer through a first nonmagnetic layer,
• wherein said magnetic recording layer comprises:
• a first free layer;
• a second free layer being in contact with said first nonmagnetic layer and having reversible magnetization;
• and
• a second nonmagnetic layer provided between said first free layer and said second free layer,
• wherein said first free layer includes:
• a magnetization switching region having reversible magnetization and overlapping said second free layer;
• a first magnetization fixed region connected to a first boundary of said magnetization switching region and whose magnetization orientation is fixed in a first direction;
• and
• a second magnetization fixed region connected to a second boundary of said magnetization switching region and whose magnetization orientation is fixed in a second direction,
• wherein both of said first direction and said second direction are directions toward said magnetization switching region or directions away from said magnetization switching region,
• magnetization of said magnetization switching region is directed to said first boundary or said second boundary,
• a domain wall is formed at said first boundary or said second boundary in said first free layer, and
• data writing is performed by moving said domain wall,
• wherein said second free layer has no domain wall,
• said second nonmagnetic layer is so formed as to cover at least said magnetization switching region, and
• said magnetization switching region of said first free layer and said second free layer are magnetically coupled to each other through said second nonmagnetic layer.