Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device

A fabrication method of a semiconductor storage device, comprising:

• forming a semiconductor region of a first conductivity type in a semiconductor layer;
• forming a selection electrode that connects with said semiconductor region with an insulating film interposed and forming a first semiconductor region and second semiconductor region of a second conductivity type in the semiconductor region on two sides of said selection electrode;
• forming a first resistance-changing layer on said first semiconductor region and forming a second resistance-changing layer on said second semiconductor region;
• and
• forming a first wiring layer on said first resistance-changing layer and forming a second wiring layer on said second resistance-changing layer,
• wherein the concentration of impurities of a first conductivity type in said semiconductor region is at least 1E+18 cm−2, and the concentration of impurities in said first semiconductor region and in said second semiconductor region is at least 1E+18 cm−2.