Porous valve metal thin film, method for production thereof and thin film capacitor
AssigneeSumitomo Metal Mining Co., Ltd.
InventorsToshiyuki Osako, Tetsufumi Komukai
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Abstract
A porous valve metal thin film, a method for the production thereof, and a thin film capacitor utilizing the thin film as an anode. The porous valve metal thin film has an integral continuous structure that includes the valve metal, an outside surface, and micropores connected to the outside surface. The thin film has a surface area that is at least double a surface area of the outside surface if the outside surface of the thin film were flat. The valve metal is niobium, tantalum, a niobium alloy or a tantalum alloy and has a particle diameter within a range of 10 nm to 1 μm. The micropores have pore diameters within a range of 10 nm to 1 μm.
Claims15
A porous valve metal thin film having an integral continuous structure, an outside surface and a plurality of micropores that are uniformly distributed within the integral continuous structure and connected to the outside surface, the integral continuous structure consisting of particles of a valve metal chosen from the group consisting of niobium, tantalum, niobium alloys, and tantalum alloys, wherein the outside surface of the thin film has a surface area that is at least double a surface area of the outside surface if the outside surface of the thin film were flat, each of the particles of the valve metal has a particle diameter within a range of 10 nm to 1 μm, and each of the micropores has a pore diameter within a range of 10 nm to 1 μm.
Dependencies are inferred from the claim text.