Solid-state imaging device, method of fabricating solid-state imaging device, and camera
AssigneeSony Corporation
InventorKentaro Akiyama
Life of this patent
Estimating the term…
Abstract
Disclosed is a solid-state imaging device receiving incident light from a backside thereof. The imaging device includes a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, a wiring layer formed on a first surface of the semiconductor layer, a pad portion formed on a second surface of the semiconductor layer, an opening formed to reach a conductive layer of the wiring layer, and an insulating film extendedly coated from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer.
Claims12
A solid-state imaging device receiving incident light from a backside thereof, the solid-state imaging device comprising:
- a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, the semiconductor layer having oppositely facing first and second surfaces;
- a wiring layer formed on the first surface of the semiconductor layer, the wiring layer having a conductive layer therein;
- a pad portion formed on the second surface of the semiconductor layer;
- an on-chip microlens layer carried on the second surface of the semiconductor layer;
- an opening in the semiconductor layer that extends in a vertical direction from the second surface and into the wiring layer so as to extend to the conductive layer, the opening having at least one sidewall extending in the vertical direction, the conductive layer being exposed at a bottom of the opening;
- an insulating film covering the at least one sidewall of the opening in the vertical direction;
- a passivation layer covering the at least one sidewall of the opening in the vertical direction over the insulating film;
- and
- a portion of the mircrolens layer covering the at least one sidewall of the opening in the vertical direction over the passivation layer.
A method of fabricating a solid-state imaging device comprising:
- providing a semiconductor layer having a plurality of pixels, each pixel having a photolectric converter, the semiconductor layer having oppositely facing first and second surfaces;
- forming a wiring layer on the first surface of the semiconductor layer, the wiring layer including a conductive layer therein;
- forming an opening extending in a vertical direction from the second surface of the semiconductor layer and into the wiring layer so as to reach the conductive layer, the opening having at least one sidewall, the conductive layer being exposed at a bottom of the opening;
- forming an insulating film that covers the at least one sidewall of the opening in the vertical direction;
- forming a passivation layer that covers the at least one sidewall opening in the vertical direction over the insulating film;
- and
- forming an on-chip microlens layer that has a portion extending into the opening and covers the at least one sidewall of the opening in the vertical direction over the passivation layer.
A camera comprising:
- a solid-state imaging device;
- an optical lens;
- and
- a signal processor, wherein the solid-state imaging device includes
- (a) a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, the semiconductor layer having oppositely facing first and second surfaces,
- (b) a wiring layer formed on the first surface of the semiconductor layer, the wiring layer having a conductive layer therein,
- (c) a pad portion formed on the second surface of the semiconductor layer,
- (d) an on-chip microlens layer carried on the second surface of the semiconductor layer,
- (e) an opening in the semiconductor layer that extends in a vertical direction from the second surface and into the wiring layer so as to extend to the conductive layer, the opening having at least one sidewall, the conductive layer being exposed at a bottom of the opening,
- (f) an insulating film covering the at least one sidewall of the opening in the vertical direction,
- (g) a passivation layer covering the at least one sidewall in the vertical direction over the insulating film, and
- (h) a portion of the mircrolens layer covering the at least one sidewall of the opening in the vertical direction over the passivation layer.
Dependencies are inferred from the claim text.