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US 8,299,857 B2Granted
RF power amplifier including broadband input matching network
AssigneeIntegra Technologies, Inc.
InventorRichard P. Keshishian
Life of this patent
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Abstract
An RF power amplifier is disclosed that has improved input matching or reduced return losses over a wider frequency range. The amplifier includes an input impedance matching network, a resistive element, a transistor, and an output impedance matching network. The resistive element is coupled between the input impedance matching network and the input of the transistor. The resistive element is configured to lower the quality factor (Q) of the input impedance matching network. This has the effect of reducing the input impedance variation over a given frequency range. As a result, the overall impedance matching over the given frequency range is improved, thereby reducing the input return losses. This allows the RF power amplifier to be used in wider bandwidth applications.
Claims26
An RF power amplifier, comprising:
- an input transmission line adapted to receive an input RF signal;
- a transistor adapted to amplify the input RF signal to generate an output RF signal;
- a first input impedance matching network coupled between the input transmission line and an input of the transistor, wherein the first impedance matching network is adapted to improve an input impedance matching between the input transmission line and the input of the transistor for a defined frequency range;
- a resistive element coupled between the first input impedance matching network and the input of the transistor, wherein the resistive element is adapted to lower a quality factor (Q) of the first input impedance matching network to improve the impedance matching for the defined frequency range;
- an output transmission line adapted to produce the output RF signal;
- an output impedance matching network coupled between an output of the transistor and the output transmission line, wherein the output impedance matching network is adapted to improve an output impedance matching between the output of the transistor and the output transmission line for the defined frequency range;
- and
- a second input impedance matching network coupled between the resistive element and the input of the transistor, wherein the second impedance matching network is adapted to improve an input impedance matching between the input transmission line and the input of the transistor for the defined frequency range.
5 more elements
An RF power amplifier, comprising:
- an input transmission line;
- a transistor including an input and an output;
- a first input impedance matching network adapted to improve an input impedance match between the input transmission line and the input of the transistor for a defined frequency range;
- a resistive element adapted to improve the input impedance match for the defined frequency range;
- an output transmission line;
- an output impedance matching network adapted to improve an output impedance match between the output of the transistor and the output transmission line for the defined frequency range;
- and
- a second input impedance matching network coupled between the resistive element and the input of the transistor, wherein the second impedance matching network is adapted to improve the input impedance match between the input transmission line and the input of the transistor for the defined frequency range.
5 more elements
An RF power amplifier, comprising:
- an input transmission line;
- a transistor including an input and an output;
- an input impedance matching network including a resistive element adapted to improve an input impedance match between the input transmission line and the input of the transistor for a defined frequency range;
- an output transmission line;
- and
- an output impedance matching network adapted to improve an output impedance match between the output of the transistor and the output transmission line for the defined frequency range;
- wherein the input impedance network further comprises a first inductive element and a second inductive element, both of which are coupled in series between the input transmission line and the input of the transistor;
- wherein the resistive element comprises a plurality of chip resistors;
- wherein the first inductive element comprises a plurality of wirebonds coupled in parallel between the input transmission line and the chip resistors, respectively;
- and
- wherein the second inductive element comprises a plurality of wirebonds coupled in parallel between the chip resistors and the input of the transistor, respectively.
8 more elements
An RF power amplifier, comprising:
- an input transmission line adapted to receive an input RF signal;
- a transistor adapted to amplify the input RF signal to generate an output RF signal;
- a first input impedance matching network coupled between the input transmission line and an input of the transistor, wherein the first impedance matching network is adapted to improve an input impedance matching between the input transmission line and the input of the transistor for a defined frequency range;
- a resistive element coupled between the first input impedance matching network and the input of the transistor, wherein the resistive element is adapted to lower a quality factor (Q) of the first input impedance matching network to improve the impedance matching for the defined frequency range;
- an output transmission line adapted to produce the output RF signal;
- and
- an output impedance matching network coupled between an output of the transistor and the output transmission line, wherein the output impedance matching network is adapted to improve an output impedance matching between the output of the transistor and the output transmission line for the defined frequency range;
- wherein the input impedance matching network further comprises:
- a first inductive element;
- a second inductive element coupled in series with the first inductive element, the input transmission line, and the resistive element;
- and
- a capacitive element coupled to a node between the first and second inductive elements and ground potential;
- wherein the first and second inductive elements comprise first and second sets of wirebonds coupled in parallel, respectively.
10 more elements
Dependencies are inferred from the claim text.