Semiconductor chip device with solder diffusion protection
AssigneeAdvanced Micro Devices, Inc.
InventorMichael Z. Su
Life of this patent
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Abstract
Various methods and apparatus for establishing thermal pathways for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip that has a substrate and a first active circuitry portion extending a first distance into the substrate. A barrier is formed in the first semiconductor chip that surrounds but is laterally separated from the first active circuitry portion and extends into the substrate a second distance greater than the first distance.
Claims9
A method of manufacturing, comprising:
- providing a first semiconductor chip including a substrate with a first principal side and a second and opposite principal side and a first active circuitry portion extending a first distance into the substrate at the second principal side;
- forming a barrier in the first semiconductor chip surrounding but laterally separated from the first active circuitry portion and extending into the substrate a second distance greater than the first distance;
- coupling a second semiconductor chip to the first semiconductor chip with a plurality of interconnects, the second semiconductor chip having a third principal side facing but separated from the second principal side of the first semiconductor chip by a gap;
- and
- positioning a solder-type thermal interface material on the first principal side of the first semiconductor chip and a portion of the third principle side of the second semiconductor chip laterally separated from the interconnects.
An apparatus, comprising:
- a first semiconductor chip including a substrate with a first principal side and a second and opposite principal side and a first active circuitry portion extending a first distance into the substrate at the second principal side;
- a barrier in the first semiconductor chip surrounding but laterally separated from the first active circuitry portion and extending into the substrate a second distance greater than the first distance.
- a second semiconductor chip coupled to the first semiconductor chip, the second semiconductor chip having a third principal side facing but separated from the second principal side of the first semiconductor chip by a gap;
- a plurality of interconnects coupling the second principal side to the third principal side;
- and
- a solder-type thermal interface material on the first principal side of the first semiconductor chip and a portion of the third principal side of the second semiconductor chip laterally separated from the interconnects.
A method of manufacturing, comprising:
- providing a semiconductor chip including a first principle side, a peripheral wall and a first active circuitry portion extending a first distance into the semiconductor chip;
- forming a barrier in the semiconductor chip surrounding but laterally separated from the first active circuitry portion and extending into the semiconductor chip a second distance greater than the first distance;
- and
- positioning a solder-type thermal interface material on the first principle side of the second semiconductor chip and peripheral wall of the semiconductor chip.
Dependencies are inferred from the claim text.