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US 8,299,624 B2Granted
Semiconductor device, circuit substrate, and electronic device
AssigneeSeiko Epson Corporation
InventorYoshihide Matsuo
Life of this patent
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Abstract
A semiconductor device has a through electrode formed in a through hole which penetrates a Si substrate from one surface to the other surface of the Si substrate, wherein a rectangular electrode pad is provided on the other surface with an insulation film laid between the electrode pad and the other surface, an opening of the through hole on the one surface side is circular, an opening of the through hole on the other surface side is rectangular, and the area of the opening on the other surface side is made smaller than the area of the opening on the one surface side.
Claims7
A semiconductor device, comprising:
- a silicon substrate that has a first surface and a second surface;
- a through hole that is formed in the silicon substrate, the through hole penetrating the silicon substrate from the first surface to the second surface;
- a rectangular electrode pad that is provided on the second surface with an insulation film provided between the electrode pad and the second surface;
- a first opening of the through hole provided at the first surface, the first opening having a circular shape;
- and
- a second opening of the through hole provided at the second surface, the second opening having a rectangular shape,
- wherein an area of the first opening is smaller than an area of the second opening, and
- the through hole has a truncated pyramid-shaped inclined surface next to the second opening, and the inclined surface is directed toward a center of the second opening.
5 more elements
Dependencies are inferred from the claim text.