Semiconductor device having wiring layer with a wide wiring and fine wirings
AssigneeRenesas Electronics Corporation
InventorDaisuke Oshida
Life of this patent
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Abstract
Provided is a semiconductor device having a wiring layer formed of damascene wiring. The semiconductor device includes: a first wiring having a width equal to or larger than 0.5 μm; a second wiring adjacent to the first wiring and arranged with a space less than 0.5 μm from the first wiring; and a third wiring adjacent to the second wiring and arranged with a space equal to or smaller than 0.5 μm from the first wiring. In the semiconductor device, the second wiring and the third wiring are structured to have the same electric potential.
Claims18
A semiconductor device including a wiring layer formed of damascene wiring, comprising:
- a first wiring having a width, in a first direction, equal to or larger than 0.5 μm;
- a second wiring adjacent to the first wiring in the first direction and arranged with a non-zero space less than 0.5 μm from the first wiring in the first direction;
- and
- a third wiring adjacent to the second wiring in the first direction and arranged with a non-zero space equal to or smaller than 0.5 μm from the first wiring in the first direction,
- wherein the second wiring and the third wiring are structured to have the same electric potential, and
- wherein the first wiring and the second wiring are structured to have different potentials.
A semiconductor device including a wiring layer formed of damascene wiring, comprising:
- a first wiring having a width, in a first direction, equal to or larger than 0.5 μm;
- a second wiring adjacent to, and spaced apart from, the first wiring in the first direction;
- and
- a third wiring adjacent to, and spaced apart from the second wiring, the third wiring arranged, in the first direction, with a non-zero space equal to or smaller than 0.5 μm from the first wiring such that the second wiring is arranged, in the first direction, between the first wiring and the third wiring,
- wherein the second wiring and the third wiring are structured to have the same electric potential, and
- wherein the first wiring and the second wiring are structured to have different potentials.
Dependencies are inferred from the claim text.