IC devices having TSVS including protruding tips having IMC blocking tip ends
AssigneeTexas Instruments Incorporated
InventorsJeffrey A. West, Young-Joon Park
Life of this patent
Estimating the term…
Abstract
A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve, an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to protruding TSV tips is on a portion of the sidewalls of protruding TSV tips. The passivation layers is absent from a distal portion of protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends which cover a portion of the TSV sidewalls, are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
Claims12
A through silicon via (TSV) die, comprising:
- a topside semiconductor surface with active circuitry and a bottomside surface;
- a plurality of TSVs each including an outer dielectric sleeve and an inner metal core, extending from said topside semiconductor surface to a TSV tip protruding from said bottomside surface of the die, wherein the protruding TSV tip has a circumferential sidewall and a bottom surface;
- an end portion of the circumferential sidewall of the TSV tip embedded in a cap of a first metal exclusive solder, which also covers the bottom surface of the protruding TSV tip;
- and
- a layer of a second metal exclusive solder and different from said first metal having a bulbous shape covering said cap of the first metal layer and a portion of the circumferential sidewall not embedded in the cap of the first metal.
An integrated circuit (IC) device, comprising:
- a first IC chip and a second IC chip joined with a metallurgical join;
- the first IC chip includes:
- a plurality of TSVs extending from a topside semiconductor surface to a TSV tip protruding from a bottomside surface of the die, wherein the protruding TSV tip has a circumferential sidewall and a bottom surface;
- an end portion of the circumferential sidewall of the TSV tip embedded in a cap of a first metal exclusive solder, which also covers the bottom surface of the protruding TSV tip;
- and
- a layer of a second metal exclusive solder and different from said first metal having a bulbous shape covering said cap of the first metal layer and a portion of the circumferential sidewall not embedded in the cap of the first metal;
- the second IC chip having a plurality of protruding bonding features aligned to the TSV tips with bulbous shaped second metal layer;
- and
- the metallurgical joint between each TSV tip and each protruding bonding feature, including a solder portion adjacent the second metal layer.
Dependencies are inferred from the claim text.