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US 8,299,610 B1Granted
Semiconductor device having RF shielding and method therefor
AssigneeAmkor Technology, Inc.
InventorsChristopher J. Berry, Christopher M. Scanlan
Life of this patent
Estimating the term…
Abstract
A semiconductor device and method of manufacturing has a substrate having a plurality of metal layers. At least one metal layer is exposed on at least one side surface of the semiconductor device. A die is coupled to the substrate. A mold compound encapsulates the die and a top surface of the substrate. A conductive coating is applied to the mold compound and to at least one metal layer exposed on at least one side surface of the substrate.
Claims20
A semiconductor device comprising:
- a substrate having a plurality of metal layers;
- offset surfaces formed within at least one side surface of the substrate, wherein the offset surfaces are exposed on an outer perimeter of the semiconductor device;
- a die coupled to the substrate;
- at least one via formed in the substrate, the at least one via having one of metal filling or metal plating and electrically coupled to at least one metal layer in the substrate, a lengthwise portion of the at least one via exposed within the offset surfaces of the substrate along the outer perimeter of the semiconductor device;
- a mold compound encapsulating the die and a first surface of the substrate;
- and
- a conductive coating attached to the mold compound and to the lengthwise portion of the at least one via exposed within the offset surfaces of the substrate.
4 more elements
A semiconductor device comprising:
- a substrate having a plurality of metal layers;
- offset surfaces formed within at least one side surface of the substrate, wherein the offset surfaces are exposed on an outer perimeter of the semiconductor device;
- at least one via formed in the substrate, the at least one via having one of metal filling or metal plating and electrically coupled to at least one metal layer in the substrate, a lengthwise portion of the at least one via exposed within the offset surfaces of the substrate along the outer perimeter of the semiconductor device;
- a die coupled to the substrate;
- a mold compound encapsulating the die and a top surface of the substrate;
- and
- means for shielding attached to the mold compound and the lengthwise portion of the at least one via exposed within the offset surfaces of the substrate.
4 more elements
A method of manufacturing a semiconductor device comprising:
- providing a substrate having a plurality of metal layers, wherein the substrate has at least one via formed therein, the at least one via having one of metal filling or metal plating and electrically coupled to at least one metal layer in the substrate;
- coupling a die to a first surface of the substrate;
- encapsulating the first surface of the substrate;
- forming offset surfaces within at least one side surface of the substrate to expose the lengthwise portion of the at least one via within the offset surfaces, wherein the offset surfaces are exposed on an outer perimeter of the semiconductor device;
- and
- applying a conductive coating to the mold compound and to the lengthwise portion of the at least one via exposed within the offset surfaces.
3 more elements
Dependencies are inferred from the claim text.