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US 8,299,590 B2Granted
Semiconductor assembly having reduced thermal spreading resistance and methods of making same
AssigneeXilinx, Inc.
InventorArifur Rahman
Life of this patent
Estimating the term…
Abstract
Semiconductor assemblies having reduced thermal spreading resistance and methods of making the same are described. In an example, a semiconductor device includes a primary integrated circuit (IC) die and at least one secondary IC die mounted on the primary IC die. A heat extraction element includes a base mounted to the semiconductor device such that each of the at least one secondary IC die is between the primary IC die and the heat extraction element. At least one dummy fill is adjacent the at least one secondary IC die, and each thermally couples the primary IC die to the heat extraction element.
Claims20
A semiconductor device, comprising:
- a first integrated circuit (IC) die having a first surface;
- at least one additional IC die each having a top surface and a bottom surface, the bottom surface of each of the at least one additional IC die being mounted to the first surface of the first IC die;
- at least one dummy fill each separate from the at least one additional IC die and having a top surface and a bottom surface, the bottom surface of each of the at least one dummy fill being mounted to the first surface of the first IC die adjacent the at least one additional IC die;
- a heat extraction element extending along and in physical contact with the entire top surface of the at least one additional IC die and the top surface of the at least one dummy fill;
- and
- a mounting surface that has direct contact with a bottom surface of the heat extraction element, the mounting surface including the entire top surface of each of the at least one additional IC die and the top surface of the at least one dummy fill, wherein the physical contact of both the entire top surface of the at least one additional IC die and the top surface of the at least one dummy fill enables the thermal coupling of the first IC die to the heat extraction element, wherein the at least one dummy fill provides a direct thermal conductive path from the first IC die to the heat extraction element, and wherein the at least one dummy fill and the at least one additional IC die are encapsulated by a mold compound.
3 more elements
A method of fabricating a semiconductor device, comprising:
- fabricating a first integrated circuit (IC) die having a first surface;
- fabricating at least one additional IC die each having a top surface and a bottom surface;
- mounting the bottom surface of each of the at least one additional IC die to the first surface of the first IC die;
- fabricating at least one dummy fill each having a top surface and a bottom surface;
- mounting the bottom surface of each of the at least one dummy fill to the first surface of the first IC die separate from and adjacent the at least one additional IC die;
- mounting a bottom surface of a heat extraction element to the entire top surface of each of the at least one additional IC die and the top surface of the at least one dummy fill, the heat extraction element extending along and in physical contact with the entire top surface of each of the at least one additional IC die and the top surface of the at least one dummy fill, wherein the physical contact with both the entire top surface of each of the at least one additional IC die and the top surface of the at least one dummy fill enables the thermal coupling of the first IC die to the heat extraction element, and wherein the at least one dummy fill provides a direct thermal conductive path from the first IC die to the heat extraction element;
- and
- encapsulating the at least one additional IC die and the at least one dummy fill using a mold compound.
5 more elements
An semiconductor assembly, comprising:
- a semiconductor device including a primary integrated circuit (IC) die and at least one secondary IC die mounted on the primary IC die;
- a heat extraction element having a base mounted to the semiconductor device such that each of the at least one secondary IC die is between the primary IC die and the heat extraction element;
- and
- at least one dummy fill each separate from and adjacent the at least one secondary IC die and each thermally coupling the primary IC die to the heat extraction element,
- wherein the heat extraction element extends along and is in physical contact with an entire top surface of each of the at least one secondary IC die and the top surface of the at least one dummy fill such that the physical contact of both the entire top surface of each of the at least one secondary IC die and the top surface of the at least one dummy fill enables the thermal coupling of the first IC die to the heat extraction element;
- and
- wherein the top surface of the at least one dummy fill is directly coupled to a bottom surface of the heat extraction element to provide a direct thermal conductive path from the primary IC die to the heat extraction element, and wherein the at least one dummy fill and the at least one secondary IC die are encapsulated by a mold compound.
4 more elements
Dependencies are inferred from the claim text.