Semiconductor device and method of manufacturing the same
AssigneeShinko Electric Industries Co., Ltd.
InventorsTakaharu Yamano, Syota Miki
Life of this patent
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Abstract
A disclosed semiconductor device includes a semiconductor chip having an electrode pad on a circuit forming face of the semiconductor chip, an internal connection terminal formed on the electrode pad, a stepped portion formed along an outer edge portion of the circuit forming face of the semiconductor chip, a first insulating layer formed on the circuit forming face of the semiconductor chip to cover at least the stepped portion, a second insulating layer formed on the circuit forming face of the semiconductor chip to cover the first insulating layer, and an interconnection formed on the second insulating layer and electrically connected to the electrode pad via the internal connection terminal.
Claims14
A semiconductor device comprising:
- a semiconductor chip including
- a semiconductor substrate,
- a semiconductor integrated circuit formed on a first surface of the semiconductor substrate,
- an electrode pad formed on a circuit forming face of the semiconductor substrate, and
- a protection layer;
- an internal connection terminal formed on the electrode pad;
- a stepped portion being a groove that is formed along the protection layer and a part of the semiconductor substrate and formed along an outer edge portion of the circuit forming face of the semiconductor chip;
- a first insulating layer formed on the protection layer, the first insulating layer being configured to cover at least the stepped portion by filling the stepped portion;
- a second insulating layer configured to cover the first insulating layer;
- and
- an interconnection formed on the second insulating layer and electrically connected to the electrode pad via the internal connection terminal.
Dependencies are inferred from the claim text.