US 8,299,583 B2 · Two-sided semiconductor structure

Abstract

Deep via trenches and deep marker trenches are formed in a bulk substrate and filled with a conductive material to form deep conductive vias and deep marker vias. At least one first semiconductor device is formed on the first surface of the bulk substrate. A disposable dielectric capping layer and a disposable material layer are formed over the first surface of the bulk substrate. The second surface, located on the opposite side of the first surface, of the bulk substrate is polished to expose and planarize the deep conductive vias and deep marker vias, which become through-substrate vias and through-substrate alignment markers, respectively. At least one second semiconductor device and second metal interconnect structures are formed on the second surface of the bulk substrate. The disposable material layer and the disposable dielectric capping layer are removed and first metal interconnect structures are formed on the first surface.

Claims20

Dependent claims

A semiconductor structure comprising:

a first semiconductor device located on a first surface of a semiconductor substrate;
a second semiconductor device located on a second surface of said semiconductor substrate, wherein said second surface is located opposite to said first surface;
and
a through-substrate via (TSV) extending from said first surface to said second surface, wherein a first end surface of said TSV is substantially coplanar with said first surface and a second end surface of said TSV is substantially coplanar with said second surface, wherein an entirety of said TSV is located between said first surface and said second surface.

1 more element

Dependencies are inferred from the claim text.

Two-sided semiconductor structure

Life of this patent

Two-sided semiconductor structure

Life of this patent

Abstract

Claims20