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US 8,299,578 B1Granted
High voltage bipolar transistor with bias shield
AssigneeNational Semiconductor Corporation
InventorJeffrey Babcock
Life of this patent
Estimating the term…
Abstract
In a SOI process, a high voltage BJT structure with BVCEO versus FT control is provided by including a bias shield over the laterally extending collector region and controlling the bias of the shield.
Claims9
A lateral BJT with BV CEO versus Fr control, comprising
- an emitter with emitter contact,
- a base formed underneath the emitter and having at least one base contact,
- at least one collector extending underneath the base, each collector having
- at least one collector contact positioned laterally with respect to the emitter and the base, and
- at least one bias shield, each bias shield being positioned between one of the at least one base contact and one of the collector contacts, and extending laterally between the base and said collector contact, each bias shield having a bias shield contact that is isolated from contacts to the emitter, base, and any collectors.
2 more elements
Dependencies are inferred from the claim text.