Resistance-change memory cell array
AssigneeKabushiki Kaisha Toshiba
InventorsYoshio Ozawa, Katsuyuki Sekine
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Abstract
According to one embodiment, a resistance-change memory cell array in which a plurality of horizontal electrodes extending horizontally and a plurality of vertical electrodes extending vertically are arranged to configure a cross-point structure includes rectifying insulating films formed in contact with side surfaces of the vertical electrodes in facing regions between the horizontal electrodes and the vertical electrodes, variable resistance films formed in contact with side surfaces of the horizontal electrodes in the facing regions between the horizontal electrodes and the vertical electrodes, and conductive layers formed between the rectifying insulating films and the variable resistance films.
Claims20
A resistance-change memory cell array in which a plurality of horizontal electrodes extending horizontally and a plurality of vertical electrodes extending vertically are arranged to configure a cross-point structure, comprising:
- rectifying insulating films formed in contact with side surfaces of the vertical electrodes in respective facing regions between the horizontal electrodes and the vertical electrodes,
- variable resistance films formed in contact with side surfaces of the horizontal electrodes in the facing regions between the horizontal electrodes and the vertical electrodes, and
- conductive layers formed between the rectifying insulating films and the variable resistance films.
A resistance-change memory cell array in which a plurality of horizontal electrodes extending horizontally and a plurality of vertical electrodes extending vertically are arranged to configure a cross-point structure, comprising:
- variable resistance films formed in contact with side surfaces of the vertical electrodes in respective facing regions between the horizontal electrodes and the vertical electrodes,
- rectifying insulating films formed in contact with side surfaces of the horizontal electrodes in the facing regions between the horizontal electrodes and the vertical electrodes, and
- conductive layers formed between the variable resistance films and the rectifying insulating films.
A resistance-change memory cell array in which a plurality of horizontal electrodes extending horizontally and a plurality of vertical electrodes extending vertically are arranged to configure a cross-point structure, comprising:
- rectifying insulating films formed in contact with side surfaces of one of the horizontal electrodes and vertical electrodes in facing regions between the respective electrodes, and
- variable resistance films formed in contact with side surfaces of the other electrodes of the horizontal electrodes and vertical electrodes in the facing regions between the respective electrodes and formed in contact with the rectifying insulating films,
- wherein an area of the rectifying insulating film in a direction perpendicular to a facing direction of the above electrodes is smaller than an area of the variable resistance film in a direction perpendicular to the facing direction.
Dependencies are inferred from the claim text.