Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the same

An electronic device comprising:

• a buried conductive region;
• a buried insulating layer over the buried conductive region;
• a semiconductor layer disposed over the buried insulating layer, wherein the semiconductor layer has a primary surface and an opposing surface, and the buried conductive region is disposed closer to the opposing surface than to the primary surface;
• a first current-carrying electrode of a first transistor, wherein the first current carrying electrode is disposed along the primary surface and spaced apart from the buried conductive layer;
• a first vertical conductive structure extending through the buried insulating layer, wherein the first vertical conductive structure is electrically connected to the first current-carrying electrode and the buried conductive region;
• and
• an insulating liner disposed between the first vertical conductive structure and the semiconductor layer.

A process of forming an electronic device comprising:

• providing a substrate that includes a semiconductor layer over a buried insulating layer that is over a buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface, and the buried conductive region is disposed closer to the opposing surface than to the primary surface;
• forming a first doped region within the semiconductor layer and along the primary surface of the first semiconductor layer, wherein the first doped region is part of a first current-carrying electrode of a first transistor;
• and
• forming a first vertical conductive structure extending through at least part of the semiconductor layer and buried insulating layer, wherein, in a finished device, the buried conductive region, the first vertical conductive structure, and the first doped region are electrically connected to one another;
• forming a second doped region within the semiconductor layer and along the primary surface of the semiconductor layer, wherein the second doped region is part of a second current-carrying electrode of a second transistor;
• and
• forming a second vertical conductive structure extending through at least part of the semiconductor layer and buried insulating layer, wherein, in a finished device, the buried conductive region, the second vertical conductive structure, and the second doped region are electrically connected to one another.