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AssigneeInternational Business Machines Corporation
InventorsMatthias Fertig, Thomas Pflueger, Thomas Morf, Nikolaj Moll
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A multi-junction opto-electronic device including a stack of wavelength selective absorption layers is proposed. The absorption layers include each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.
A multi-junction opto-electronic device comprising a stack of wavelength selective absorption layers, the absorption layers comprising each a first layer with a grating of a specific pitch defining wavelength of an incident light to be absorbed within a subjacent second electrically active layer which is on a third electrically inactive layer, the second electrically active layer of different absorption layers being in electrical connection with lateral contacts to extract electrical charge carriers generated by the absorbed incident light within the active layer,
Dependencies are inferred from the claim text.