US 8,299,555 B2 · Semiconductor optoelectronic structure

Abstract

A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.

Claims9

Dependent claims

A semiconductor optoelectronic structure, comprising:

a substrate;
a waveguide disposed on the substrate;
and
a transformer disposed on the waveguide, wherein the transformer comprises a plurality of dielectric layers, the dielectric layers having a trench therebetween, the trench comprising a plurality of side walls, and the side walls of the trench defined by the dielectric layers are vertically aligned, and the transformer partially overlaps with the waveguide.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

12/618,774Filed 15 Nov 2009

Published

US 2011/0115040 A119 May 2011

Granted

30 Oct 2012

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

G02B 6/1228
Basic optical elements, e.g. light-guiding paths: tapered waveguides, e.g. integrated spot-size transformers
G02B 6/136
Integrated optical circuits characterised by the manufacturing method: by etching
G02B 6/12002
Of the integrated circuit kind: three-dimensional structures
G02B 6/12004
Of the integrated circuit kind: combinations of two or more optical elements

Semiconductor optoelectronic structure

Life of this patent

Semiconductor optoelectronic structure

Life of this patent

Abstract

Claims9